Computer Simulation for Anisotropic Atomic Distribution in Amorphous Ar Thin Films.

Atomic hydrogen interactions with amorphous carbon thin films

The atomic-scale interactions of H atoms with hydrogenated amorphous carbon a-C:H films were identified using molecular dynamics MD simulations and experiments based on surface characterization tools. Realistic a-C:H films developed using MD simulations were impinged with H atoms with a kinetic energy corresponding to a temperature of 700 K. The specific chemical reactions of the H atoms with t...

Atomic Simulation of Temperature Effect on the Mechanical Properties of Thin Films

The molecular dynamic technique was used to simulate the nano-indentation test on the thin films of silver, titanium, aluminum and copper which were coated on the silicone substrate. The mechanical properties of the selected thin films were studied in terms of the temperature. The temperature was changed from 193 K to 793 K with an increment of 100 K. To investigate the effect of temperature on...

Theoretical simulation of the anisotropic phases of antiferromagnetic thin films

We simulate antiferromagnetic thin films. Dipole-dipole and antiferromagnetic exchange interactions as well as uniaxial and quadrupolar anisotropies are taken into account. Various phases unfold as the corresponding parameters J, D, and C, as well as the temperature T and the number n of film layer, vary. We find i how the strength of the anisotropy arising from dipole-dipole interactions varie...

Computer simulation of atomic structure of rhenium-based amorphous alloys

Nitrogen doping of amorphous carbon thin films

Nitrogenated and hydrogenated amorphous carbon (a-C:H:N) films have been deposited by a plasma beam source using a gas mixture of C2H2 , Ar and N2 . The Ar/C2H2 ratio is kept constant at a ratio of 3, with the nitrogen flow allowed to vary. Nonnitrogenated films, with Ar/C2H2 ratios of 3 and 6 were also deposited and analyzed before attempting to identify the modifications to the microstructura...